15N60 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 15N60 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION Preliminary Power MOSFET The UTC 15N60 is an N-channel mode

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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SEMICONDUCTOR TECHNICAL DATA KGT15N60FDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avala

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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FQP15N60/FQPF15N60 600V 15A Super Junction MSFET General Description Product Summary The FQP15N60& FQPF15N60 have been fabricated using the advance

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IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum

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SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation comb

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FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT FGPF15N60UNDF 600 V, 15 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Cu

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IGP15N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS =

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SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit wit

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N R N-CHANNEL MOSFET JCS15N60H MAIN CHARACTERISTICS Package ID 15 A VDSS 600 V Rdson（@Vgs=10V） 0.52 Ω Qg 36.0 nC z z z UPS APPLICATIONS z

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SEMICONDUCTOR TECHNICAL DATA KPM15N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characterist

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VBZM15N60S www.VBsemi.com N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg Typ. (nC) Qg

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IKB15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A

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www.vishay.com SiHG15N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC

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SGH15N60RUFD SGH15N60RUFD Short Circuit Rated IGBT IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) p

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SGP15N60, Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand t

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Data

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