15N60 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 15N60 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION Preliminary Power MOSFET The UTC 15N60 is an N-channel mode

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) T

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IGP15N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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IKB15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistanc

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www.vishay.com SiHG15N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC

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SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit wit

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SEMICONDUCTOR TECHNICAL DATA KGT15N60FDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avala

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FQP15N60/FQPF15N60 600V 15A Super Junction MSFET General Description Product Summary The FQP15N60& FQPF15N60 have been fabricated using the advance

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DG15N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ： V1.0 General Description DG15N60N，， ，，，。 ，，。 DG15N60 is an N-channel enhancement mode MOSFET, which

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SGH15N60RUFD SGH15N60RUFD Short Circuit Rated IGBT IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) p

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SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation comb

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IKP15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Data

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N R N-CHANNEL MOSFET JCS15N60H MAIN CHARACTERISTICS Package ID 15 A VDSS 600 V Rdson（@Vgs=10V） 0.52 Ω Qg 36.0 nC z z z UPS APPLICATIONS z

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

Rating: 1 ★ (6 votes)