16-Megabit Datasheet | Specifications & PDF Download

www.DataSheet4U.com EN25F16 EN25F16 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector FEATURES • Single power supply operation - Full volt

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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LinkSmart Rev. No. Approved date A July 17 2002 L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY PRELIMINARY A Revision history History I

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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S29AL004D 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory ADVANCE INFORMATION Notice to Readers: The Advance Inf

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www.DataSheet4U.com S29AL016D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Data Sheet PRELIMINARY Distinctive C

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V S25FL016A 16 Megabit CMOS 3.0 Volt Flash Memory with 50-MHz SPI (Serial Peripheral Interface) Bus Data Sheet S25FL016A Cover Sheet This product h

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www.DataSheet4U.com S29GL-A MirrorBit® Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mod

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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FINAL Am27C1024 1 Megabit (65 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Speed options as fast as 55 ns s Low power cons

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www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

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www.DataSheet4U.com S29AL016M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) 3.0 Volt-only Boot Sector Flash Memory featuring MirrorBitTM technology Data Shee

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EN29GL064AT/EN29GL064AB EN29GL064AT/EN29GL064AB 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only F

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Features • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Contro

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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FINAL Am29F016 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 Volt ± 10% for read and

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ACT–F512K32 High Speed 16 Megabit FLASH Multichip Module Features CIRCUIT TECHNOLOGY www.aeroflex.com ■ 4 Low Power 512K x 8 FLASH Die in One MCM P

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FINAL Am27C1024 1 Megabit (65 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS s Fast access time — Speed options as fast as 55 ns s Low power cons

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