160-CHANNEL Datasheet | Specifications & PDF Download

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L

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New Vision Microelectronics Inc. DATA SHEET NV3052C 2160-channel 8-bit Source Driver and GOA/GIP Gate Driver with System-on chip for Color Amorphous T

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P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA

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P1604ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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http://www.ncepower.com Pb Free Product NCEP0160A NCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology tha

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 MT4160 N-Channel Powe rTrench® MOSFET   60V, 9A, 10m : *HQHUDO'HVFULSWLRQ This N-Channel MOSFET is produced using Mos-tech Semicondu

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NIKO-SEM N-Channel High Voltage Mode Field Effect Transistor P1160ZTF:TO-220F P1160ZTFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS

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FNK30H160 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(O

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isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

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Shanghai New Vision Microelectronics Co., Ltd DATA SHEET NV3052CGRB 2160-channel 8-bit Source Driver and GOA/GIP Gate Driver with System-on chip for C

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NIKO-SEM N-Channel High Voltage Mode P1160ZT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 3

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http://www.ncepower.com Pb Free Product NCEP0160F NCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology tha

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P1603BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25

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HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

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P1160ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 390mΩ @VGS = 10V 11A TO-220 ABSOLUTE MAXIMUM RATINGS (TA =

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NIKO-SEM P-Channel Logic Level Enhancement P1604ETF Mode Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(

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isc N-Channel MOSFET Transistor IXTP160N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5mΩ@VGS=10V ·Fully characterized avalanche volt

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http://www.ncepower.com Pb Free Product NCEP0160 NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that

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2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ ty

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