160-Channel Datasheet | Specifications & PDF Download

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L

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HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

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FNK30H160 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(O

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HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S

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VBMB1607V3 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.005 at VGS = 10 V 0.038 at VGS = 4.5 V ID (A)a 120 20 FEATURES •

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NIKO-SEM N-Channel High Voltage Mode Field Effect Transistor P1160ZTF:TO-220F P1160ZTFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS

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XP20AN160P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Lower Gate Charge G

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XP60SL160DIN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ Ro

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P1604ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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SM1600DSCS ® Dual N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/0.31A, RDS(ON)= 0.8W(max.) @ VGS=10V RDS(ON)= 1.1W(max.) @ VGS=

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P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA

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VBMB1606 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.005 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 120 95 FEATURES • 1

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XP60SL160DP Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH

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P1603BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 9.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25

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19-1388; Rev 0; 11/98 +2.7V, Low-Power, 2-Channel, 108ksps, Serial 10-Bit ADCs in 8-Pin µMAX General Description The MAX157/MAX159 low-power, 10-bit

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19-1085; Rev 1; 10/96 Dual-Channel CardBus and PCMCIA Power Switches with SMBus™ Serial Interface ________________General Description The MAX1601/MAX

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSD160N1

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2SJ160, 2SJ161, 2SJ162 Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Featu

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isc N-Channel MOSFET Transistor IXTP160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vol

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SCT3160KW7 N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 1200V 160mΩ 17A 100W lOutline TO-263-7L lInner circuit lFeatures 1) L

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