160-Channel Datasheet | Specifications & PDF Download

16010ALZ-VB 16010ALZ-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.120 a

(6 views)

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSD160N1

(5 views)

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L

(5 views)

HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

(4 views)

Power Supply IC Series for TFT-LCD Panels 12V Input Multi-channel System Power Supply IC BD8160AEFV No.09035EBT01 ●Description The BD8160AEFV is a s

(4 views)

AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description Product Summary The AOT1608L/AOB1608L uses a robust technology that is des

(4 views)

Data Sheet 3.0 kV RMS, 6-Channel Digital Isolators ADuM160N/ADuM161N/ADuM162N/ADuM163N 14532-001 14532-002 FEATURES High common-mode transient imm

(4 views)

AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that

(4 views)

www.vishay.com SQJQ160ER Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8LR D D D 6 D 7 8 5 D 10.42 mm S S

(4 views)

UNISONIC TECHNOLOGIES CO., LTD UTF1404 Preliminary 160A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTF1404 is an N-channel enhancement MOSF

(4 views)

2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

(3 views)

HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

(3 views)

HD66115T 160-Channel Common Driver Packaged in a Slim Tape Carrier Package Description The HD66115T is a common driver for large dot matrix liquid cr

(3 views)

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1396 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRA

(3 views)

AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description Product Summary The AOT1608L/AOB1608L uses a robust technology that is des

(3 views)

HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

(3 views)

HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

(3 views)

2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Fea

(3 views)

[AK4160] AK4160 16-channel Capacitive Touch Sensor IC GENERAL DESCRIPTION The AK4160 is a low operating voltage and low power consumption 16-channel c

(3 views)

Main Product Characteristics VDSS 20V RDS(on) 28mohm(typ.) ID 4.5A SOT23-3 Features and Benefits  Advanced trench MOSFET process technology  S

(3 views)