HY1608P

Part number:

HY1608P

Manufacturer:

HOOYI

File Size:

478.07 KB

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📄 Download HY1608P Datasheet PDF

Description:

N-channel mosfet.
HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Other.
wise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG.

HY1608B Datasheet PDF

HY1608B, HOOYI
HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

HY1603 Datasheet PDF

HY1603, HOOYI
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603D Datasheet PDF

HY1603D, HOOYI
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603S Datasheet PDF

HY1603S, HOOYI
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603U Datasheet PDF

HY1603U, HOOYI
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1606AP Datasheet PDF

HY1606AP, HOOYI
HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .

HY1606B Datasheet PDF

HY1606B, HOOYI
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1606P Datasheet PDF

HY1606P, HOOYI
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

N-Channel MOSFET

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HY1608P Distributor