HY1608B Datasheet - HOOYI

HY1608B N-Channel MOSFET

HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 -55 to 175 65 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient A.

HY1608B Datasheet (478.07 KB)