16N50 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOT16N50 FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (

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STD16N50M2, STF16N50M2, STP16N50M2 Datasheet N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages TAB 3

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VD

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrins

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www.DataSheet.co.kr FMH16N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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AP16N50W RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-

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GPT16N50 / GPT16N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET

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FDA16N50 500V N-Channel MOSFET FDA16N50 500V N-Channel MOSFET Features • 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 32 nC)

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VD

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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www.DataSheet.co.kr FMV16N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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AP16N50W-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Ro

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Advanced Power Electronics Corp. AP16N50P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Require

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isc N-Channel MOSFET Transistor IXTA16N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche volta

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isc N-Channel MOSFET Transistor IXTP16N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 420mΩ@

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500V N-Channel MOSFETs PMF16N50T General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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