16N50 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 16N50 16A, 500V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC’s ad

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs

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PD - 95855 SMPS MOSFET IRFB16N50K Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard S

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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UNISONIC TECHNOLOGIES CO., LTD 16N50-TC Power MOSFET 16A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 16N50-TC are N-Channel enhancement mode

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TSF16N50MR TSF16N50MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technolog

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect

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www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET TO-220AB TO-220 FULLPAK D S D G GDS G D2PAK (TO-263) GD S S

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TSP16N50M / TSF16N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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www.DataSheet.co.kr FMH16N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10

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KIA SEMICONDUCTORS 16A，500V N-CHANNEL MOSFET 16N50H 1.Description This power MOSFET is produced using KIA advanced planar stripe DMOS technology. T

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isc N-Channel MOSFET Transistor IXTP16N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche volta

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GPT16N50 / GPT16N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFA 16N50P IXFP 16N50P IXFH 16N50P VD

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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10

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IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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