16N50C Datasheet | Specifications & PDF Download

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs

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www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET TO-220AB TO-220 FULLPAK D S D G GDS G D2PAK (TO-263) GD S S

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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10

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SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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SLP16N50C / SLF16N50C SLP16N50C / SLF16N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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Final data SPW16N50C3 VDS @ Tjmax RDS(on) ID 560 0.28 16 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ul

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET TO-220AB TO-220 FULLPAK D S D G GDS G D2PAK (TO-263) GD S S

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V ·Reduced switching and

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET TO-220AB TO-220 FULLPAK D S D G GDS G D2PAK (TO-263) GD S S

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isc N-Channel MOSFET Transistor SPP16N50C3，ISPP16N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Switching

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SLP16N50C / SLF16N50C SLP16N50C / SLF16N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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