17-inch Datasheet | Specifications & PDF Download

isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A

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isc Adjustable Voltage Regulator FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Line and Load Regulation ·Floati

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isc Silicon NPN Power Transistor TT2170LS DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC1730 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 10 ps TYP

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (V

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isc Silicon NPN Power Transistor BD175 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SU

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min)- MJE5170 = -140V(Min)- MJE5171 = -160V(M

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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isc P-Channel MOSFET Transistor AOD417 FEATURES ·Drain Current –ID=-25A@ TC=25℃ ·Drain Source Voltage- : VDSS=-30V(Min) ·Static Drain-Source On-Resi

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317K FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% L

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isc N-Channel MOSFET Transistor 2SK1704 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations fo

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1723 DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Vol

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isc P-Channel MOSFET Transistor NVD5117PL FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage : VDSS= -60V(Min) ·Static Drain-Source On

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isc Silicon PNP Power Transistor KSB1017 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Compl

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capabi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5171 DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SA1930

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·100% avalanche tested ·Minimum L

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isc N-Channel MOSFET Transistor 2SK1703 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

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