1700V Datasheet | Specifications & PDF Download

SD11808 1700V 10A Silicon Carbide Schottky Diode - 1 PROVISIONAL KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCH

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C3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-spee

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C3M0900170M 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • Fully isolated package for simplified a

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E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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IMBF170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V

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E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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IMWH170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at

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Datasheet V2021.A.0 G3S17050PM 1700V/ 50A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recove

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Silicon Carbide (SiC) Diode – EliteSiC, TO247-2, 25 A, 1700 V SiC Merged PiN-Schottky (MPS) Diode UJ3D1725K2 Description onsemi offers the 3rd generat

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IMWH170R650M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at

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