1700V Datasheet | Pinout, Features, Price Comparison & PDF

C3M0900170M 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • Fully isolated package for simplified a

Datasheet V2021.A.0 G3S17050PM 1700V/ 50A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recove

IMBF170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V

C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

IMWH170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at

Silicon Carbide (SiC) Diode – EliteSiC, TO247-2, 25 A, 1700 V SiC Merged PiN-Schottky (MPS) Diode UJ3D1725K2 Description onsemi offers the 3rd generat

IMWH170R650M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at

SD11808 1700V 10A Silicon Carbide Schottky Diode - 1 PROVISIONAL KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCH

SCQH045N170 1700V 45mΩ N-Channel SiC Power MOSFET Nov. 2021 Features • Typical on-Resistance: RDS (on)=45mΩ(typ.) • High Blocking Voltage • 100% Ava

E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

C3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-spee

E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed