IMWH170R650M1 Datasheet, Mosfet, Infineon

IMWH170R650M1 Features

• Mosfet
• VDSS = 1700 V at Tvj = 25°C
• IDDC = 7.5 A at TC = 25°C
• RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C
• Optimized for fly-back topologies
• 12 V

PDF File Details

Part number:

IMWH170R650M1

Manufacturer:

Infineon ↗

File Size:

1.25MB

Download:

📄 Datasheet

Description:

1700v sic trench mosfet. 1   – gate 2   – drain 3   – source TO-247 HCC   – 3Pin 2021-10-27 restric

IMWH170R650M1 Application

• Applications
• General purpose drives (GPD)
• EV-Charging
• Energy Storage Systems (ESS)
• String inverter

TAGS

IMWH170R650M1

Infineon

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