IMWH170R650M1 Datasheet - Infineon

IMWH170R650M1, 1700V SiC Trench MOSFET

IMWH170R650M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET .
Package pin definition:. Pin 1. Gate. Pin 2 & backside. Drain. Pin 3. Source TO-247 HCC.

datasheet Preview Page 1 from Datasheet4u.com

IMWH170R650M1-Infineon.pdf

IMWH170R650M1 Datasheet Preview — Preview of IMWH170R650M1 PDF

Datasheet Details

Part number:

IMWH170R650M1

Manufacturer:

Infineon ↗

File Size:

1.55 MB

Description:

1700V SiC Trench MOSFET

Features

* VDSS = 1700 V at Tvj = 25°C
* IDDC = 7.5 A at TC = 25°C
* RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V gate-source voltage compatible with most fly-back controllers
* Very low switching losses

Applications

* General purpose drives (GPD)
* EV Charging
* Energy storage systems (ESS)
* String inverter
* Uninterruptible power supplies Product validation

IMWH170R650M1 Distributors

📁 Related Datasheet

📌 All Tags

IMWH170R650M1 1700V SiC Trench MOSFET Infineon

Infineon IMWH170R650M1-like datasheet