IMWH170R650M1 1700V SiC Trench MOSFET

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Description

IMWH170R650M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET .
Package pin definition:. Pin 1. Gate. Pin 2 & backside. Drain. Pin 3. Source TO-247 HCC.

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Datasheet Specifications

Part number: IMWH170R650M1
Manufacturer: Infineon ↗
File Size: 1.55 MB
Datasheet: IMWH170R650M1-Infineon.pdf
Description: 1700V SiC Trench MOSFET

Features

* VDSS = 1700 V at Tvj = 25°C
* IDDC = 7.5 A at TC = 25°C
* RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V gate-source voltage compatible with most fly-back controllers
* Very low switching losses

Applications

* General purpose drives (GPD)
* EV Charging
* Energy storage systems (ESS)
* String inverter
* Uninterruptible power supplies Product validation

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