IMW120R040M1H

1200V SiC Trench MOSFET

Infineon

IMW120R040M1H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 55 A at TC = 25°C

* RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Short circuit withstand time 3 µs

* Benchmark gate threshold voltage, VGS(th) = 4.2 V

* Robust against parasitic

IMW120R040M1H General Description

1

* Gate 2

* Drain 3

* Source TO-247

* 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R040M1H Package PG-TO247-3-U06 Marking 12M1H040 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this docume.

IMW120R040M1H Datasheet (1.28 MB)