IMW120R040M1H 1200V SiC Trench MOSFET

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Description

IMW120R040M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1. Gate 2. Drain 3. Source TO-247. 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R040M1H Pack.

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Datasheet Specifications

Part number: IMW120R040M1H
Manufacturer: Infineon ↗
File Size: 1.28 MB
Datasheet: IMW120R040M1H-Infineon.pdf
Description: 1200V SiC Trench MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 55 A at TC = 25°C
* RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Short circuit withstand time 3 µs
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic

Applications

* Industrial drives
* Industrial power supplies
* Solar inverters Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
* Please also note the application note AN2019-05 for power and thermal cycling Descri

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