Datasheet Details
- Part number
- IMW120R040M1H
- Manufacturer
- Infineon ↗
- File Size
- 1.28 MB
- Datasheet
- IMW120R040M1H-Infineon.pdf
- Description
- 1200V SiC Trench MOSFET
IMW120R040M1H Description
IMW120R040M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1.
Gate 2.
Drain 3.
Source
TO-247.
3Pin
2021-10-27
restricted
Copyright © Infineon T
Type IMW120R040M1H
Pack.
IMW120R040M1H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 55 A at TC = 25°C
* RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Short circuit withstand time 3 µs
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic
IMW120R040M1H Applications
* Industrial drives
* Industrial power supplies
* Solar inverters
Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
* Please also note the application note AN2019-05 for power and thermal cycling
Descri
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