IMW120R045M1 Datasheet, Mosfet, Infineon

IMW120R045M1 Features

  • Mosfet
  • Very low switching losses
  • Threshold-free on state characteristic
  • Wide gate-source voltage range
  • Benchmark gate threshold voltage, VGS(th) = 4.5V

PDF File Details

Part number:

IMW120R045M1

Manufacturer:

Infineon ↗

File Size:

1.30MB

Download:

📄 Datasheet

Description:

1200v sic trench mosfet.

Datasheet Preview: IMW120R045M1 📥 Download PDF (1.30MB)
Page 2 of IMW120R045M1 Page 3 of IMW120R045M1

IMW120R045M1 Application

  • Applications
  • Energy generation o Solar string inverter and solar optimizer
  • Industrial power supplies o Industrial UPS o Industri

TAGS

IMW120R045M1
1200V
SiC
Trench
MOSFET
Infineon

📁 Related Datasheet

IMW120R007M1H - MOSFET (Infineon)
IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.

IMW120R020M1H - MOSFET (Infineon)
IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.

IMW120R030M1H - MOSFET (Infineon)
IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c.

IMW120R060M1H - Silicon Carbide MOSFET (Infineon)
IMW120R060M1H IMW120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.

IMW120R090M1H - Silicon Carbide MOSFET (Infineon)
IMW120R090M1H IMW120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.

IMW120R140M1H - Silicon Carbide MOSFET (Infineon)
IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.

IMW120R220M1H - Silicon Carbide MOSFET (Infineon)
IMW120R220M1H IMW120R220M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.

IMW120R350M1H - Silicon Carbide MOSFET (Infineon)
IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-.

IMW65R007M2H - MOSFET (Infineon)
IMW65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

IMW65R015M2H - MOSFET (Infineon)
IMW65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

Stock and price

Infineon Technologies AG
SICFET N-CH 1.2KV 52A TO247-3
DigiKey
IMW120R045M1XKSA1
17 In Stock
Qty : 120 units
Unit Price : $7.38
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts