IMW120R045M1
1.30MB
1200v sic trench mosfet.
TAGS
📁 Related Datasheet
IMW120R007M1H - MOSFET
(Infineon)
IMW120R007M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R020M1H - MOSFET
(Infineon)
IMW120R020M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R030M1H - MOSFET
(Infineon)
IMW120R030M1H
IMW120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses Threshold-free on state c.
IMW120R060M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R060M1H
IMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R090M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R090M1H
IMW120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R140M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R140M1H
IMW120R140M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R220M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R220M1H
IMW120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW120R350M1H - Silicon Carbide MOSFET
(Infineon)
IMW120R350M1H
IMW120R350M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-.
IMW65R007M2H - MOSFET
(Infineon)
IMW65R007M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
IMW65R015M2H - MOSFET
(Infineon)
IMW65R015M2H
MOSFET
CoolSiCª MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.