IMW120R030M1H - Silicon Carbide MOSFET
IMW120R030M1H Features
* Very low switching losses Gate pin 1
* Threshold-free on state characteristic
* Wide gate-source voltage range
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body d
