IMW120R030M1H Datasheet - Infineon

IMW120R030M1H, Silicon Carbide MOSFET

IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET .

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Datasheet Details

Part number:

IMW120R030M1H

Manufacturer:

Infineon ↗

File Size:

1.15 MB

Description:

Silicon Carbide MOSFET

Features

* Very low switching losses Gate pin 1
* Threshold-free on state characteristic
* Wide gate-source voltage range
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body d

Applications

* Energy generation o Solar string inverter and solar optimizer
* Industrial power supplies o Industrial UPS o Industrial SMPS
* Infrastructure
* Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Drain pi

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