Datasheet4U Logo Datasheet4U.com

IMW120R020M1H 1200V SiC Trench MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1. gate 2. drain 3. source TO-247. 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R020M1H Pack.

📥 Download Datasheet

Preview of IMW120R020M1H PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 98 A at TC = 25°C
* RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Short circuit withstand time 3 µs
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic

Applications

* General purpose drives (GPD)
* EV Charging
* Online UPS/Industrial UPS
* String inverter
* Solar power optimizer Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
* Please also note th

IMW120R020M1H Distributors

📁 Related Datasheet

📌 All Tags

IMW120R020M1H 1200V SiC Trench MOSFET Infineon
Infineon IMW120R020M1H-like datasheet
IMW120R007M1H
IMW120R030M1H
IMW120R040M1H
IMW120R045M1
IMW120R060M1H