IMW120R020M1H

MOSFET

Infineon

IMW120R020M1H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 98 A at Tc = 25°C

* RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Short circuit withstand time 3 µs

* Benchmark gate threshold voltage, VGS(th) = 4.2 V

* Robust against parasitic

IMW120R020M1H General Description

1

* gate 2

* drain 3

* source TO-247

* 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R020M1H Package PG-TO247-3-STD-NN2.5 Marking 12M1H020 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this .

IMW120R020M1H Datasheet (1.20 MB)