IMW120R020M1H - 1200V SiC Trench MOSFET
1 * gate 2 * drain 3 * source TO-247 * 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R020M1H Package PG-TO247-3-U06 Marking 12M1H020 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this docume
IMW120R020M1H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 98 A at TC = 25°C
* RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Short circuit withstand time 3 µs
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic
