IMW120R007M1H, Infineon
IMW120R007M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R020M1H, Infineon
IMW120R020M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features • VDSS = 1200 V at Tvj = 25°C • ID.
IMW120R030M1H, Infineon
IMW120R030M1H
IMW120R030M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses Threshold-free on state c.
IMW120R045M1, Infineon
IMW120R045M1
IMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses Threshold-free on state cha.
