Datasheet Details
- Part number
- IMW120R060M1H
- Manufacturer
- Infineon ↗
- File Size
- 1.15 MB
- Datasheet
- IMW120R060M1H-Infineon.pdf
- Description
- Silicon Carbide MOSFET
IMW120R060M1H Description
IMW120R060M1H IMW120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET .
IMW120R060M1H Features
* Very low switching losses
Gate
pin 1
* Threshold-free on state characteristic
* Wide gate-source voltage range
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body d
IMW120R060M1H Applications
* Energy generation o Solar string inverter and solar optimizer
* Industrial power supplies o Industrial UPS o Industrial SMPS
* Infrastructure
* Charge o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Drain pi
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