IMW120R007M1H Datasheet, Mosfet, Infineon

IMW120R007M1H Features

• Mosfet
• VDSS = 1200 V at Tvj = 25°C
• IDDC = 225 A at Tc = 25°C
• RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Benchmark gate

PDF File Details

Part number:

IMW120R007M1H

Manufacturer:

Infineon ↗

File Size:

1.21MB

Download:

📄 Datasheet

Description:

Mosfet. 1   – gate 2   – drain 3   – source TO-247   – 3Pin 2021-10-27 restricted

IMW120R007M1H Application

• Applications
• General purpose drives (GPD)
• EV-Charging
• Online UPS/Industrial UPS
• String inverter
• So

TAGS

IMW120R007M1H

Infineon

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