IMW120R007M1H - MOSFET
1 * gate 2 * drain 3 * source TO-247 * 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R007M1H Package PG-TO247-3-STD-NN2.5 Marking 12M1H007 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this
IMW120R007M1H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 225 A at Tc = 25°C
* RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic turn on, 0 V turn-off gate voltage can be ap
