IMW120R007M1H MOSFET

Infineon

Description

IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1. gate 2. drain 3. source TO-247. 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R007M1H Pack.

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Datasheet Specifications

Part number: IMW120R007M1H
Manufacturer: Infineon ↗
File Size: 1.21 MB
Datasheet: IMW120R007M1H-Infineon.pdf
Description: MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 225 A at Tc = 25°C
* RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic turn on, 0 V turn-off gate voltage can be ap

Applications

* General purpose drives (GPD)
* EV-Charging
* Online UPS/Industrial UPS
* String inverter
* Solar optimizer Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
* Please also note the appl

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