Part number:
IMW120R007M1H
Manufacturer:
File Size:
1.21 MB
Description:
Mosfet.
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 225 A at Tc = 25°C
* RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic turn on, 0 V turn-off gate voltage can be ap
IMW120R007M1H Datasheet (1.21 MB)
IMW120R007M1H
1.21 MB
Mosfet.
📁 Related Datasheet
IMW120R020M1H MOSFET (Infineon)
IMW120R030M1H Silicon Carbide MOSFET (Infineon)
IMW120R040M1H 1200V SiC Trench MOSFET (Infineon)
IMW120R045M1 1200V SiC Trench MOSFET (Infineon)
IMW120R060M1H Silicon Carbide MOSFET (Infineon)
IMW120R090M1H Silicon Carbide MOSFET (Infineon)
IMW120R140M1H Silicon Carbide MOSFET (Infineon)
IMW120R220M1H Silicon Carbide MOSFET (Infineon)
IMW120R350M1H Silicon Carbide MOSFET (Infineon)
IMW65R007M2H MOSFET (Infineon)