Datasheet Details
- Part number
- IMW120R007M1H
- Manufacturer
- Infineon ↗
- File Size
- 1.21 MB
- Datasheet
- IMW120R007M1H-Infineon.pdf
- Description
- MOSFET
IMW120R007M1H Description
IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1.
gate 2.
drain 3.
source
TO-247.
3Pin
2021-10-27
restricted
Copyright © Infineon T
Type IMW120R007M1H
Pack.
IMW120R007M1H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 225 A at Tc = 25°C
* RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic turn on, 0 V turn-off gate voltage can be ap
IMW120R007M1H Applications
* General purpose drives (GPD)
* EV-Charging
* Online UPS/Industrial UPS
* String inverter
* Solar optimizer Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
* Please also note the appl
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