IMWH170R1K0M1 Datasheet - Infineon

1700V SiC Trench MOSFET

IMWH170R1K0M1 Features

* VDSS = 1700 V at Tvj = 25°C

* IDDC = 5.4 A at TC = 25°C

* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C

* Optimized for fly-back topologies

* 12 V / 0 V gate-source voltage compatible with most fly-back controllers

* Very low switching losses

IMWH170R1K0M1 General Description

1 * gate 2 * drain 3 * source TO-247 HCC * 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R1K0M1 Package PG-TO247-3-STD-NN4.8 Marking 170M11K0 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of th.

IMWH170R1K0M1 Datasheet (1.31 MB)