IMWH170R1K0M1 - 1700V SiC Trench MOSFET
1 * gate 2 * drain 3 * source TO-247 HCC * 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R1K0M1 Package PG-TO247-3-STD-NN4.8 Marking 170M11K0 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of th
IMWH170R1K0M1 Features
* VDSS = 1700 V at Tvj = 25°C
* IDDC = 5.4 A at TC = 25°C
* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V gate-source voltage compatible with most fly-back controllers
* Very low switching losses
