IMWH170R1K0M1 Datasheet - Infineon

IMWH170R1K0M1, 1700V SiC Trench MOSFET

IMWH170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1. gate 2. drain 3. source TO-247 HCC. 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R1K0M1 P.

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Datasheet Details

Part number:

IMWH170R1K0M1

Manufacturer:

Infineon ↗

File Size:

1.31 MB

Description:

1700V SiC Trench MOSFET

Features

* VDSS = 1700 V at Tvj = 25°C
* IDDC = 5.4 A at TC = 25°C
* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V gate-source voltage compatible with most fly-back controllers
* Very low switching losses

Applications

* General purpose drives (GPD)
* EV-Charging
* Energy Storage Systems (ESS)
* String inverter
* Uninterruptible power supplies Product validation

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