IMWH170R450M1 Datasheet - Infineon

IMWH170R450M1, Silicon Carbide MOSFET

IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET .
1. gate 2. drain 3. source TO-247 HCC. 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R450M1 P.

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Datasheet Details

Part number:

IMWH170R450M1

Manufacturer:

Infineon ↗

File Size:

1.37 MB

Description:

Silicon Carbide MOSFET

Features

* VDSS = 1700 V at Tvj = 25°C
* IDDC = 10 A at TC = 25°C
* RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V gate-source voltage compatible with most fly-back controllers
* Very low switching losses
* B

Applications

* General purpose drives (GPD)
* EV-Charging
* Energy Storage Systems (ESS)
* String inverter
* Uninterruptible power supplies Product validation

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