17W Datasheet | Specifications & PDF Download

Datasheet Middle Power Class-D Speaker Amplifier Series 17W+17W Class D Speaker Amplifier for Digital Input BD28623MUV General Description BD28623MU

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ChipSourceTek TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSou

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BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Application

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807W. MAXIMUM RATING (Ta=25 ) CHARACTER

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SURFACE MOUNT SCHOTTKY BARRIER DIODE B5817WS thru B5819WS REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere FEATURES • For use in low volt

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Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier conduction.  Low power loss/high e

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BC817W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features ，， BC807W 。 Hi

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FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.)

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Jingdao Microelectronics co.LTD B5817WSFL THRU B5819WSFL SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction

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Elektronische Bauelemente RoHS Compliant Product BC817W NPN Transistor Epitaxial Planar Transistor Description The BC817W is designed for switching

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

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BC817W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features ，， BC807W 。 Hi

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® WON-TOP ELECTRONICS MMBD717WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ri

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1. 05 B5817W SCHOTTKY BARRIER DIODE FEATURES Power dissipation PD: 450 mW (Tamb=25℃) Collector current IF: 1 A Collector-base voltage VR: 20 V Operat

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B5817W-B5819W Technical Data Green Products Data Sheet N1752, Rev. - B5817W-B5819W SCHOTTKY BARRIER DIODE Features: • For use in low voltage, hig

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1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parame

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807W. MAXIMUM RATING (Ta=25 ) CHARACTER

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