180-Channel Datasheet | Specifications & PDF Download

HY1808AP/M/B/PS/PM Features • 80V/84A RDS(ON)= 6.2mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available

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VBQA1806 www.VBsemi.com N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0048 at VGS = 10 V ID (A) a 60 Qg (Typ.) FEATURES •

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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Description AP180N03PIT 30V N-Channel Enhancement Mode MOSFET The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate c

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Description AP180N03PIT 30V N-Channel Enhancement Mode MOSFET The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate c

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free an

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12 LED IC TM1808 TM1808LEDIC，，PWM16 ， 12；，，PWM，， 12LED，，；24V5V ，，，，，。         CMOS OUT24V 24V5V 12PWM 16PWM ，PWM VDD：5.0Ｖ ：SOP16、DIP16

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HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source

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NCE60R180,NCE60R180F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and d

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N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.01

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NCE60R180,NCE60R180F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and d

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HY1808P/W N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free

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NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel E

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isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID= -14A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance

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Datasheet Version 1.0 TMR6318C 72 Channels 180mm TMR Magnetic Image Sensors Description The TMR6318C is a 72 pixels, 10DPI magnetic image sensor (MIS

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