180-Channel Datasheet | Specifications & PDF Download

HY1808P/W N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free

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HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free an

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HY1808AP/M/B/PS/PM Features • 80V/84A RDS(ON)= 6.2mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available

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MOS-TECH Semiconductor Co.,LTD N-Channel Enhancement Mode Field Effect Transistor MT1803 Features： VDS=30V ℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ

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HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source

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MAX1668/MAX1805† 19-1766; Rev 0; 8/00 Multichannel Remote/Local Temperature Sensor ________________General Description The MAX1668/MAX1805 are prec

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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, OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET  General Description OSG60R180xF use ad

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 MT60G020B N-Channel PowerMOSFET  60V, 180A, 1.8m: *HQHUDO'HVFULSWLRQ This N-channel MOSFET is produced using MOS-TECH Semiconductor's advan

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NCE60R180,NCE60R180F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and d

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NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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NCE70R180,NCE70R180F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and d

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel E

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel

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N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.01

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