MRF9180 Datasheet (Motorola) - N-CHANNEL RF POWER MOSFET

MRF9180, N-CHANNEL RF POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Typic

MRF9180 Features

* RF DEVICE DATA h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB) h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 60 MRF9180 MRF9180S 7 Zo = 5 Ω www.DataSheet4U.com f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pou