Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N *Channel Enha.
22 pF, 100B Chip Capacitors, ATC #100B220GW 2.
Features
* in, output power, drain efficiency and intermodulation distortion. Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 9
NOTES
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MRF9
Applications
* with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large
* signal, common source amplifier applications in 26 volt base station equipment.
* On
* Die Integrated Input Match
* Typical Performance @ Full GSM Ba
