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MRF9130LR3 28 V LATERAL N-CHANNEL RF POWER MOSFETs

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF9130L/D The RF Sub - Micron MOSFET Line RF Power Fi.
10 µF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D 100 nF Chip Capacitors (1206), AVX #1206C104KATDA 22 pF, 100B Chip Capacitors, ATC #1.

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Datasheet Specifications

Part number
MRF9130LR3
Manufacturer
Motorola
File Size
584.47 KB
Datasheet
MRF9130LR3_Motorola.pdf
Description
28 V LATERAL N-CHANNEL RF POWER MOSFETs

Features

* .170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34

Applications

* with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB

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