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MRF9135LR3, MRF9135L 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MRF9135LR3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9135L/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N<.
Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case 0. 4.

MRF9135LR3 Features

* OROLA RF DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) 20 60 www. DataSheet4U. com f = 865 MHz ZOL
* f = 895 MHz Zo = 2 Ω f = 865 MHz Zin f = 895 MHz VDD = 26 V, IDQ =1100 mA, Pout = 25 W Avg. f MHz 865 880 895 Zin Zin Ω 1.15
* j0.3 1.25
* j0.5 1.35
* j0.75 ZOL

MRF9135LR3 Applications

* with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical N
* CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF9135LR3, MRF9135L. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF9135LR3, MRF9135L
Manufacturer
Motorola
File Size
435.76 KB
Datasheet
MRF9135L_Motorola.pdf
Description
26 V LATERAL N-CHANNEL RF POWER MOSFETs
Note
This datasheet PDF includes multiple part numbers: MRF9135LR3, MRF9135L.
Please refer to the document for exact specifications by model.

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