MRF9135L Datasheet (Motorola) - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MRF9135L, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9135L/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

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MRF9135L Features

* OROLA RF DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) 20 60 www.DataSheet4U.com f = 865 MHz ZOL

* f = 895 MHz Zo = 2 Ω f = 865 MHz Zin f = 895 MHz VDD = 26 V, IDQ =1100 mA, Pout = 25 W Avg. f MHz 865 880 895 Zin Zin Ω 1.15

* j0.3 1.25

* j0.5 1.35

* j0.75 ZOL