Datasheet Details
- Part number
- MRF9120LR3
- Manufacturer
- NXP ↗
- File Size
- 357.44 KB
- Datasheet
- MRF9120LR3-NXP.pdf
- Description
- RF Power MOSFET
MRF9120LR3 Description
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral M.
MRF9120LR3 Features
* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
MRF9120LR3 Applications
* with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.
* Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1000 mA IS-95 CDMA (Pilot, Sync, Paging,
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