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MRF9120LR3 - RF Power MOSFET

MRF9120LR3 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral M.

MRF9120LR3 Features

* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

MRF9120LR3 Applications

* with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.
* Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1000 mA IS-95 CDMA (Pilot, Sync, Paging,

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Datasheet Details

Part number
MRF9120LR3
Manufacturer
NXP ↗
File Size
357.44 KB
Datasheet
MRF9120LR3-NXP.pdf
Description
RF Power MOSFET

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