Datasheet Details
- Part number
- MRF9120R3
- Manufacturer
- Motorola
- File Size
- 343.91 KB
- Datasheet
- MRF9120R3_Motorola.pdf
- Description
- 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9120R3 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF9120/D The RF MOSFET Line RF Power Field Effect Tra.
Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 68 pF Chip Capacitors, B Case 0.
MRF9120R3 Features
* UT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
18 60 Gps 50 40 30 20 η 8 6 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 1 h, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION D
MRF9120R3 Applications
* with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment.
* Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS - 97 CDMA Pilot, Sync,
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