Datasheet Specifications
- Part number
- MRF9120R3
- Manufacturer
- Motorola
- File Size
- 343.91 KB
- Datasheet
- MRF9120R3_Motorola.pdf
- Description
- 26 V LATERAL N-CHANNEL RF POWER MOSFETs
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF9120/D The RF MOSFET Line RF Power Field Effect Tra.
Features
* UT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 18 60 Gps 50 40 30 20 η 8 6 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 1 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DApplications
* with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment.MRF9120R3 Distributors
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