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MRF914

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF914 Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT - 4.5 GHz (typ) @ IC = 20 mAdc www.DataSheet4U.com 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case

MRF914 General Description

Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Va.

MRF914 Datasheet (96.18 KB)

Preview of MRF914 PDF

Datasheet Details

Part number:

MRF914

Manufacturer:

Microsemi ↗

File Size:

96.18 KB

Description:

Rf & microwave discrete low power transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.

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MRF914 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi

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