MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi

Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Designed primarily for use in High Gain, low noise general purpose amplifiers.

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Datasheet Specifications

Part number: MRF914
Manufacturer: Microsemi ↗
File Size: 96.18 KB
Datasheet: MRF914_Microsemi.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT - 4.5 GHz (typ) @ IC = 20 mAdc www. DataSheet4U. com 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case

Applications

* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 3.0 40 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.6 mWatts mW/ ºC

MRF914 Distributors

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MRF914 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi

Microsemi MRF914-like datasheet