MRF914 Datasheet (Microsemi) - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF914, RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed primarily for use in High Gain, low noise general purpose amplifiers.

Also excellent for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Va

MRF914 Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT - 4.5 GHz (typ) @ IC = 20 mAdc www.DataSheet4U.com 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case