Datasheet Details
- Part number
- MRF914
- Manufacturer
- Microsemi ↗
- File Size
- 96.18 KB
- Datasheet
- MRF914_Microsemi.pdf
- Description
- RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF914 Description
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Designed primarily for use in High Gain, low noise general purpose amplifiers.
MRF914 Features
* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT - 4.5 GHz (typ) @ IC = 20 mAdc
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2 1 4 3
1. Emitter 2. Base 3. Collector 4. Case
MRF914 Applications
* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 3.0 40 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.6 mWatts mW/ ºC
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