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MRF914 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF914 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Designed primarily for use in High Gain, low noise general purpose amplifiers.

MRF914 Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT - 4.5 GHz (typ) @ IC = 20 mAdc www. DataSheet4U. com 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case

MRF914 Applications

* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 3.0 40 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.6 mWatts mW/ ºC

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Datasheet Details

Part number
MRF914
Manufacturer
Microsemi ↗
File Size
96.18 KB
Datasheet
MRF914_Microsemi.pdf
Description
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi
Microsemi MRF914-like datasheet