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MRF581 Datasheet - Microsemi

MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.5 200 Unit Vdc Vdc Vdc .

MRF581-Microsemi.pdf

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Datasheet Details

Part number:

MRF581

Manufacturer:

Microsemi ↗

File Size:

142.47 KB

Description:

Rf & microwave discrete low power transistors.

MRF581 Distributor

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MRF581 MRF581 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi