MRF581 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi

MRF581 Description

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish .
Designed for high current, low power, low noise, amplifiers up to 1.

MRF581 Features

* Low Noise - 2.5 dB @ 500 MHZ
* Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
* Ftau - 5.0 GHz @ 10v, 75mA

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Datasheet Details

Part number: MRF581
Manufacturer: Microsemi ↗
File Size: 142.47 KB
Datasheet: MRF581-Microsemi.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi

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