MRF9100 Datasheet (Motorola) - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MRF9100, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

22 pF, 100B Chip Capacitors, ATC #100B220GW 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW 10 pF, 100B Chip Capacitors, ATC #100B100GW 33 pF, 100B Chip Capacitors, ATC #100B330JW 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW 2.7 pF, 100B Chip Capacitor, ATC #

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

On Die Integrated Input Match

MRF9100 Features

* in, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z

* OL Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 9 NOTES www.DataSheet4U.com MRF9