MRF9060LR1 RF Power Field Effect Transistors

NXP

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commerc.

📥 Download Datasheet

MRF9060LR1 Datasheet Preview — Preview of MRF9060LR1 PDF

Datasheet Specifications

Part number: MRF9060LR1
Manufacturer: NXP ↗
File Size: 402.19 KB
Datasheet: MRF9060LR1-NXP.pdf
Description: RF Power Field Effect Transistors

Features

* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power
* 60 Watts PEP Po

MRF9060LR1 Distributors

📁 Related Datasheet

MRF9060LSR1 MRF9060 MRF9060MBR1 MRF9060MR1 MRF9060NBR1 MRF9060NR1

📌 All Tags

MRF9060LR1 Power Field Effect Transistors NXP

NXP MRF9060LR1-like datasheet