* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
MRF9060LR1 Datasheet (402.19 KB)
MRF9060LR1
402.19 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commerc.
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