MRF9060LR1 Datasheet - NXP

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MRF9060LR1 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commerc.

MRF9060LR1-NXP.pdf

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Datasheet Details

Part number:

MRF9060LR1

Manufacturer:

NXP ↗

File Size:

402.19 KB

Description:

RF Power Field Effect Transistors

Features

* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power
* 60 Watts PEP Po

MRF9060LR1 Distributors

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MRF9060LR1 Power Field Effect Transistors NXP

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