MRF9060LR1 - RF Power Field Effect Transistors

NXP

MRF9060LR1 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commerc.

MRF9060LR1 Features

* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal

MRF9060LR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power
* 60 Watts PEP Po

📥 Download Datasheet

MRF9060LR1 Datasheet Preview — Preview of MRF9060LR1 PDF

Datasheet Details

Part number: MRF9060LR1
Manufacturer: NXP ↗
File Size: 402.19 KB
Datasheet: MRF9060LR1-NXP.pdf
Description: RF Power Field Effect Transistors

📁 Related Datasheet

MRF9060LSR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF9060 - RF Power Field Effect Transistors (Motorola)
MRF9060MBR1 - RF Power Field Effect Transistors (Motorola)
MRF9060MR1 - RF Power Field Effect Transistors (Motorola)
MRF9060NBR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF9060NR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF9060R1 - N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)
MRF9060S - RF Power Field Effect Transistors (Motorola)

📌 All Tags

Power Field Effect Transistors NXP

NXP MRF9060LR1-like datasheet

MRF9045MBR1 - RF Power FET
MRF9045MR1 - RF Power FET
MRF9120LR3 - RF Power MOSFET
MRF101AN - RF Power LDMOS Transistors
MRF101BN - RF Power LDMOS Transistors
MRF13750H - RF Power LDMOS Transistors