Datasheet Specifications
- Part number
- MRF9060MR1
- Manufacturer
- Motorola
- File Size
- 457.81 KB
- Datasheet
- MRF9060MR1_Motorola.pdf
- Description
- RF Power Field Effect Transistors
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N<.Features
* H. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006Applications
* with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largeMRF9060MR1 Distributors
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