MRF9060LR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data MRF9060 Rev.8, 12/2004 RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral.
95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T. 5 3052. 1648.

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Datasheet Specifications

Part number: MRF9060LR1
Manufacturer: Freescale Semiconductor
File Size: 267.08 KB
Datasheet: MRF9060LR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80
* j0.10 0.80
* j0.05 0.81
* j0.10 Zload Ω 2.08
* j0.65 2.07
* j0.38 2.04
* j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as m

Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical Two
* Tone Performance at 945 MHz, 26 Volts Output Power

MRF9060LR1 Distributors

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MRF9060LR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF9060LR1-like datasheet