MRF9060LR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF9060LR1, RF Power Field Effect Transistors

95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T *5 3052 *1648 *10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060LR1 MRF9060LSR1 5 *4 RF Device Da

Freescale Semiconductor Technical Data MRF9060 Rev.

8, 12/2004 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Typical Two Tone Performance at 945 MHz, 26 Volts

MRF9060LR1 Features

* 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80

* j0.10 0.80

* j0.05 0.81

* j0.10 Zload Ω 2.08

* j0.65 2.07

* j0.38 2.04

* j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as m