MRF9060 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF9060, RF Power Field Effect Transistors

Ferrite Bead, Fair Rite #2743019447 22 mF, 35 V Tantalum Chip Capacitors, Kemet 0.1 mF, 50 V Chip Capacitors (1210) 27 pF, 50 V Chip Capacitor (0805) 8.2 pF, 50 V Chip Capacitors, ACCU *P (0805) 1.0 mF, 35 V Tantalum Chip Capacitors, Kemet 47 pF, 50 V Chip Capacitors, ACCU *P (0805) 12

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The high gain and broadband performance of these devices makes them ideal for large signal, common source amplifier applications in 26 volt ba

MRF9060 Features

* Typical Two

* Tone Performance at 945 MHz, 26 Volts Output Power

* 60 Watts PEP Power Gain

* 16 dB Efficiency

* 40% IMD

* 31 dBc

* Integrated ESD Protection

* Ease of Design for Gain and Insertion Phase Flatness

* Capa