MRF9060NR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF9060NR1, RF Power Field Effect Transistors

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Freescale Semiconductor Technical Data Document Number: MRF9060N Rev.

10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

Typical Performance at 945 MHz, 26 Volts Output Power 60

MRF9060NR1 Features

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Integrated ESD Protection

* 200_C Capable Plastic Package

* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

* TO - 270 - 2 Available