MRF9060R1 Datasheet (Motorola) - N-CHANNEL BROADBAND RF POWER MOSFETs

MRF9060R1, N-CHANNEL BROADBAND RF POWER MOSFETs

Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T *5 3052 *1648 *10 Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060R1 MRF9060SR1 4 MOTOROLA RF DEVIC

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Typical Two

MRF9060R1 Features

* ing Network Device Under Test Output Matching Network Z in Z

* OL Figure 9. Series Equivalent Input and Output Impedance MRF9060R1 MRF9060SR1 8 MOTOROLA RF DEVICE DATA NOTES www.DataSheet4U.com MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 9 NOTES www.DataSheet4U.com MRF9060R1 MRF