MRF9060S, MRF9060 RF Power Field Effect Transistors

Motorola

MRF9060S Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub *Micron MOSFET.
Ferrite Bead, Fair Rite #2743019447 22 mF, 35 V Tantalum Chip Capacitors, Kemet 0.

MRF9060S Features

* Typical Two
* Tone Performance at 945 MHz, 26 Volts Output Power
* 60 Watts PEP Power Gain
* 16 dB Efficiency
* 40% IMD
* 31 dBc
* Integrated ESD Protection
* Ease of Design for Gain and Insertion Phase Flatness
* Capa

MRF9060S Applications

* at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large
* signal, common

📥 Download Datasheet

MRF9060S Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF9060S, MRF9060. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF9060S, MRF9060
Manufacturer: Motorola
File Size: 136.20 KB
Datasheet: MRF9060-Motorola.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF9060S, MRF9060.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Motorola

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