MRF9180S Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors NMRF9180S Features
* RF DEVICE DATA h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB) h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 60 MRF9180 MRF9180S 7 Zo = 5 Ω www. DataSheet4U. com f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, PouMRF9180S Applications
* with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large
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