18N50 Datasheet | Specifications & PDF Download

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ide

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Feat

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver match

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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UNISONIC TECHNOLOGIES CO., LTD 18N50-C 18A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N50-C provide excellent RDS(ON), low ga

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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FDA18N50 — N-Channel UniFETTM MOSFET FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 mΩ Features • RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Novemb

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N N- CHANNEL MOSFET R JCS18N50WH MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 19 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High effici

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP18N50 SDF18N50 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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Silicon N-Channel Power MOSFET CR18N50F A9K General Description： CR18N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode pow

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MDP18N50 N-channel MOSFET 500V MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP18N50 uses advanced Magnachip’s MOSFET Techn

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MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP/F18N50B uses advan

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP18N50 SDF18N50 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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MOSFET – N-Channel, UniFETt 500 V, 18 A, 265 mW FDP18N50 / FDPF18N50 / FDPF18N50T Description UniFET MOSFET is onsemi's high voltage MOSFET family bas

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G18N50T N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Novemb

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