18N50-C Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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Feb 2009 PFP18N50/PFF18N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Feat

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FDP18N50 / FDPF18N50 500V N-Channel MOSFET April 2007 FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V

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UNISONIC TECHNOLOGIES CO., LTD 18N50-C 18A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N50-C provide excellent RDS(ON), low ga

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Silicon N-Channel Power MOSFET ○R CS18N50 A8R General Description： CS18N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode pow

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MDF18N50 N-channel MOSFET 500V MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω General Description The MDF18N50 uses advanced Magnachip’s MOSFET Technol

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MDF18N50 N-channel MOSFET 500V MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω General Description The MDF18N50 uses advanced MagnaChip’s MOSFET Technolo

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MDP18N50 N-channel MOSFET 500V MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP18N50 uses advanced Magnachip’s MOSFET Techn

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MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP/F18N50B uses advan

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TSP18N50M/TSF18N50M TSP18N50M/TSF18N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str

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FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω

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Feb 2009 PFP18N50/PFF18N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰

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IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ide

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FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω

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MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

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SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect t

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