18N50-C Datasheet | Specifications & PDF Download

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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Silicon N-Channel Power MOSFET ○R CS18N50 A8R General Description： CS18N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ide

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FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Feat

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www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver match

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UNISONIC TECHNOLOGIES CO., LTD 18N50-C 18A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N50-C provide excellent RDS(ON), low ga

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TSP18N50M/TSF18N50M TSP18N50M/TSF18N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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FQP18N50V2/FQPF18N50V2 QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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FDA18N50 — N-Channel UniFETTM MOSFET FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 mΩ Features • RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5

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TSP18N50M/TSF18N50M TSP18N50M/TSF18N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str

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GPT18N50C / GPT18N50CD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust Hig

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UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode pow

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N N- CHANNEL MOSFET R JCS18N50WH MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 19 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High effici

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G18N50T N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior

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G18N50T N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior

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DG18N50 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG18N50N，， ，，，。 ，，。 DG18N60 is an N-channel enhancement mode MOSFET, which

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