| No |
Part Number |
Description |
Manufacture |
PDF |
| 49 |
1N5818 |
Schottky barrier diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 03
Philips Semiconductors
Product spe |
NXP
|
|
| 48 |
1N5818 |
LOW DROP POWER SCHOTTKY RECTIFIER
1N5817, 1N5818, 1N5819
Low drop power Schottky rectifier
Features
■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalan |
STMicroelectronics
|
|
| 47 |
1N5818 |
SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20/ 30 and 40 VOLTS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State |
MotorolaInc
|
|
| 46 |
1N5818 |
1.0A SCHOTTKY BARRIER RECTIFIER
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capa |
Diodes Incorporated
|
|
| 45 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER(VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere)
1N5817 - 1N5819
MECHANICAL DATA
✶ ✶ ✶ ✶ ✶ ✶
SCHOTTKY BARRIER RECTIFIER
FEATURES
✶ ✶ ✶ ✶ ✶ ✶
VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere
Case: Molded plastic Epoxy: UL |
Wing Shing Computer Components
|
|
| 44 |
1N5818 |
1 Amp Schottky Barrier Rectifier 20 to 40 Volts
MCC
Features
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
1N5817 THRU 1N5819
1 Amp Schottky Barrier Rectifier 20 to 40 Volts
DO- |
Micro Commercial Components
|
|
| 43 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER
1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Meta |
GOOD-ARK Electronics
|
|
| 42 |
1N5818 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS
1N5817
1.0 AMP SCHOTTKY BARRIER RECTIFIERS
THRU
1N5819
VOLTAGE RANGE
20 to 40 Volts
CURRENT FEATURES
* Low forward voltage drop * High current capability * High reliability * High surge current ca |
Formosa MS
|
|
| 41 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * Low switching noise Low forward volt |
Rectron Semiconductor
|
|
| 40 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER DIODES
1N5817 - 1N5819
PRV : 20 - 40 Volts IO : 1.0 Ampere
FEATURES :
* * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward |
EIC discrete Semiconductors
|
|
| 39 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER
SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIER
VOLTAGE: 20 TO 40V CURRENT: 1.0A
FEATURES
• Epitaxial construction for chip • High current capability • Low f |
Shanghai Sunrise Electronics
|
|
| 38 |
1N5818 |
Schottky Barrier Rectifiers
1N 5817 … 1N 5819 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter
Nominal current – Nennstrom
Ø3
±0.05
1A 20…40 V DO-15 DO-204AC 0.4 g
Repetitive peak reverse voltage Periodische |
Diotec Semiconductor
|
|
