1N5818 Datasheet | Specifications & PDF Download

AiT Semiconductor Inc. 1N5817W~1N5819W www.ait-ic.com SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817W~1N5819W ar

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1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit

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1N5817W THRU 1N5819W Surface  Mount Schottky Barrier Rectifier Reverse  Voltage - 20 to 40 V Forward Current - 1 A         PINNING PIN 1 2 1 DESCRIP

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992

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Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12

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SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere Features • Metal silicon junction, majority carrier conduction • Guarding f

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1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 25A Peak  Low Power L

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1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● G

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1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C wi

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ShenZhen YueFeiDa Electronics Technology Co.,Ltd 1N5817S THRU 1N5819S FEATURE 1.0AMP. SCHOTTKY BARRIER RECTIFIERS A-405 .High current capability .

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1N5817W - 1N5819W PRV : 20 - 40 Volts IO : 1.0 Ampere SCHOTTKY BARRIER RECTIFIER DIODES SOD-123FL 2.9 2.6 1.1 0.8 1.9 1.7 0.2 0.1 MECHANICAL D

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1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parame

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www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

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1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features · · · · · High Current Capability Low Forward Voltage Drop Guard Ri

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1N5817S-1N5819S Schottky Barrier Rectifiers Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

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1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT 1 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabilit

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AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are

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