1N60A Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS1N60 A1H ○R General Description： CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Ch

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iscN-Channel MOSFET Transistor IRFU1N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10

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Silicon N-Channel Power MOSFET ○R CS1N60 A23H General Description： VDSS 600 CS1N60 A23H, the silicon N-channel Enhanced ID 0.8 VDMOSFETs, is o

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SMPS MOSFET PD - 95518A IRFR1N60APbF IRFU1N60APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Suppl

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Ch

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SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field eff

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1N60A Germanium Diode General Purpose Features: D Low Forward Voltage Drop D Low Power Consumption D Very Low Noise Level Absolute Maximum Ratings:

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iscN-Channel MOSFET Transistor IRFR1N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =7Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Ch

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SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100%

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SMPS MOSFET PD - 95518A IRFR1N60APbF IRFU1N60APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Suppl

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω I

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UNISONIC TECHNOLOGIES CO., LTD 1N60A 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have be

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Silicon N-Channel Power MOSFET ○R CS1N60 A4H General Description： VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs,

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PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate C

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PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate C

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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