1N60S Datasheet | Specifications & PDF Download

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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www.DataSheet4U.com OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal P

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme

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SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme

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SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage

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www.DataSheet4U.com OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal P

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SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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MDI1N60S N-channel MOSFET 600V MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description The MDI1N60S uses advanced MagnaChip’s MOSFET technolo

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www.DataSheet4U.com Preliminary data SPN01N60S5 Cool MOS Power-Transistor New revolutionary high voltage technology Ultra low gate charge Extreme

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HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Desi

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Shenzhen Jingdao Electronic Co., Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM1N60S N VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPI11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductor

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MOSFET - Power, Single N-Channel, SUPERFET) V, FAST, TO247-3L 600 V, 41 mW, 57 A NTHL041N60S5H Description The SUPERFET V MOSFET FAST series helps m

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DG1N60S N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N60SN，， ，，，。 ，，。 DG1N60S is an N-channel enhancement mode MOSFET, which

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www.DataSheet4U.com FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) August 2006 FKN1N60SA TRIAC (Silicon Bidirectional Thyristor) Application Exp

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TO-92 Pin Definition: 1. Gate 2. Drain 3. Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (

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