1N60S Datasheet | Specifications & PDF Download

MOSFET - Power, Single N-Channel, SUPERFET) V, FAST, TO247-3L 600 V, 41 mW, 57 A NTHL041N60S5H Description The SUPERFET V MOSFET FAST series helps m

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www.DataSheet4U.com OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal P

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HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Desi

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600V N-Channel MOSFETs PDN001N60S General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS techno

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www.DataSheet4U.com OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal P

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DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600

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DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600

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www.DataSheet4U.com Preliminary data SPN01N60S5 Cool MOS Power-Transistor New revolutionary high voltage technology Ultra low gate charge Extreme

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MDI1N60S N-channel MOSFET 600V MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description The MDI1N60S uses advanced MagnaChip’s MOSFET technolo

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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MOSFET - Power, Single N-Channel, SUPERFET), FAST, TO247-4L 600 V, 61 mW, 41 A NTH4LN061N60S5H Description The SUPERFET V MOSFET FAST series helps ma

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HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanch

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HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Desi

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Shenzhen Jingdao Electronic Co., Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM1N60S N VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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DG1N60S N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N60SN，， ，，，。 ，，。 DG1N60S is an N-channel enhancement mode MOSFET, which

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DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600

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SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme

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HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanch

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TSP11N60S / TSF11N60S/TSB11N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP11N60S/TSF11N60S /TSB11N60S 600V N-Channel MOSFET Description SJ-FET

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Shantou Huashan Electronic Devices Co., Ltd. HFF11N60S N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel

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