TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181.
JCET
1SS181 - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching Diodes FEATURES y Low forward voltage y Fast .
TRANSYS
1SS181 - Plastic-Encapsulated Diodes
Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Curren.
Toshiba Semiconductor
1SS181 - Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 .
WON-TOP
1SS181 - SURFACE MOUNT FAST SWITCHING DIODE
® WON-TOP ELECTRONICS 1SS181 SURFACE MOUNT FAST SWITCHING DIODE Pb Features Dual Diode Common Anode Fast Switching Surface Mount Package Ideal.
WILLAS
1SS181 - Ultra High Speed Switching Diode
WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Ultra High Speed Switching .006 (0.15) max. Application Pb Free Product FEATURES 1S.
MCC
1SS181 - High Speed Switching Diodes
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
RECTRON
1SS181 - SWITCHING DIODE
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS181 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:.
WEITRON
1SS181 - Surface Mount Switching Diodes
Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig.
Leshan Radio Company
L1SS181LT1 - Ultra High Speed Switching
LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr =.
Leshan Radio Company
L1SS181LT1G - Ultra High Speed Switching
LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recover.
WEJ
1SS181 - DIODE
RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR .
SEMTECH
1SS181 - SILICON EPITAXIAL PLANAR DIODE
1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio.
Kexin
1SS181 - ULTRA HIGH SPEED SWITCHING DIODE
SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS181 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recover.