TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184.
Galaxy Semi-Conductor
1SS184 - Surface mount switching diode
BL Galaxy Electrical Production specification Surface mount switching diode FEATURES z Low forward voltage Pb VF(3)=0.9V(typ). z Fast switching..
EIC
1SS184 - SILICON EPITAXIAL PLANAR DIODE
Certificate TH97/10561QM Certificate TW00/17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse .
JCET
1SS184 - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode FEATURES y Low forward voltage y Fast rev.
Leshan Radio Company
L1SS184LT1 - Ultra High Speed Switching
LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse recovery time.
Leshan Radio Company
L1SS184LT1G - Ultra High Speed Switching
LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse.
WEJ
1SS184 - DIODE
RoHS 1SS184 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re.
WEITRON
1SS184 - Surface Mount Switching Diodes
Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig.
WILLAS
1SS184 - Ultra High Speed Switching Diode
WILLAS Ultra High Speed Switching Application 1SS184 Featrues Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns .
LGE
1SS184 - Switching Diodes
1.ANODE 2. ANODE 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: B3 Maximum.
MCC
1SS184 - High Speed Switching Diodes
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"#.
RECTRON
1SS184 - SWITCHING DIODE
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS184 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF:.
SEMTECH
1SS184 - SILICON EPITAXIAL PLANAR DIODE
1SS184 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio.
Kexin
1SS184 - ULTRA HIGH SPEED SWITCHING DIODE
SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS184 Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery.
Toshiba Semiconductor
1SS184 - Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package: SC-59 Low fo.
GME
1SS184 - Surface mount switching diode
Production specification Surface mount switching diode FEATURES Low forward voltage VF=0.9V(typ). Pb Lead-free Small total capacitance. Fa.
WON-TOP
1SS184 - SURFACE MOUNT FAST SWITCHING DIODE
® WON-TOP ELECTRONICS 1SS184 SURFACE MOUNT FAST SWITCHING DIODE Pb Features Dual Diode Common Cathode Fast Switching Surface Mount Package Ide.
Eris
1SS184 - Ultra High Speed Switching
1SS184 .119(3.0) .110(2.8) .100(2.55) .089(2.25) .079(2.0) .071(1.8) .020(.50) .012(.30) .056(1.4) .047(1.2) .020(0.5) .012(0.3) .044(1.1) .035(.
AiT Components
1SS184 - ULTRA HIGH SPEED SWITCHING
AiT Components Inc. www.ait-components.com DESCRIPTION The1SS184 is available in SOT-23 Package. ORDERING INFORMATION Package Type Part Number S.
HOTTECH
1SS184 - SWITCHING DIODES
Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS184 MAR.
Kexin
1SS184 - Switching Diodes
SMD Type Switching Diodes 1SS184 Diodes Features Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Ty.
