1mA Datasheet | Specifications & PDF Download

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XC5011 _______________________________________________________ XC5011 1mA~200mA Linear Li-Ion Battery Charger GENERAL DESCRIPTION The XC5011 is a com

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S11MA01/S21MA01 S11MA01/S21MA01 s Features 1. Low operating current type ( MAX 60mArms ) 2. Compact 5-pin dual-in-line package type 3. Recognized by

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www.DataSheet4U.com M1MA141WKT1, M1MA142WKT1 Preferred Device Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Plan

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MSV SEMI Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed

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Ordering number : ENA2009 LC72121MA CMOS IC PLL Frequency Synthesizers for Electronic Tuning http://onsemi.com Overview The LC72121MA are high inpu

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FEATURES n n n n n n n n n n n n n n n n n n n LTC6246/LTC6247/LTC6248 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps DESCRIPTION The LTC®6246/L

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ETA4016 16V/120mA, 1mA Termination Current Linear Charger DESCRIPTION ETA4016 is a single cell, fully integrated constant current (CC)/constant volt

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M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applica

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141WAT1/D Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epit

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141WKT1/D Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon

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M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed

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MSV SEMI Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed

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SURGE SUPPRESSOR DIODE DAM1MA FEATURES • High transient reverse power capability suitable for protecting automobile electronic components etc. • High

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Ordering number : ENA1114 55GN01MA www.DataSheet4U.com SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA Features •

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RS1A thru RS1MA Glass Passivated Junction Fast Switching Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A FEATURES * Plastic package has

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ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applica

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www.DataSheet4U.com M1MA141WKT1, M1MA142WKT1 Preferred Device Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Plan

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