F59L1G81MA-25TG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Product Overview

ESMT

Part number	F59L1G81MA-25TG2Y
Manufacturer	ESMT
File Size	1.02 MB
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet	F59L1G81MA-25TG2Y Datasheet
Additional preview pages of the F59L1G81MA-25TG2Y datasheet.

Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Prot.

📁 Similar Datasheet

F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

Other Datasheets by ESMT

F59L1G81MA-25TIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Published: Apr 2, 2019 |