F59L1G81MA-25TG2Y Datasheet - ESMT

F59L1G81MA-25TG2Y, 1 Gbit (128M x 8) 3.3V NAND Flash Memory

ESMT Flash

Features

* Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Acces

F59L1G81MA-25TG2Y-ESMT.pdf