F59L1G81MB Datasheet, Memory, ESMT

F59L1G81MB Features

• Memory
• Voltage Supply: 3.3V (2.7V~3.6V)
• Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
• Automatic Program and Erase - Page

PDF File Details

Part number:

F59L1G81MB

Manufacturer:

ESMT

File Size:

2.01MB

Download:

📄 Datasheet

Description:

1 gbit (128m x 8) 3.3v nand flash memory. The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the mos

TAGS

F59L1G81MB

ESMT

📁 Related Datasheet

F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25TG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25TIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MB-25BUG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.