The device is a 128Mx8bit with spare 4Mx8bit capacity.
The device is offered in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve val
F59L1G81MB-25BUG2M Features
* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
* Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25
Datasheet Details
F59L1G81MB-25BUG2M, F59L1G81MB-25TG2M
ESMT
2.01 MB
1 gbit (128m x 8) 3.3v nand flash memory.
This datasheet PDF includes multiple part numbers: F59L1G81MB-25BUG2M, F59L1G81MB-25TG2M.
Please refer to the document for exact specifications by model.
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